sot-23 plastic-encapsulate transistors 2SC1815LT1 transistor ( npn ) features power dissipation marking : c1815=hf maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 150 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-15 0 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100ua, i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c = 0.1ma, i b =0 50 v collector cut-off current i ceo v ce =50v, i b =0 0.1 ua emitter cut-off current i ebo v eb = 5v, i c =0 0.1 ua dc current gain h fe v ce = 6v, i c = 2ma 130 400 collector-emitter saturation voltage v ce (sat) i c =100ma, i b = 10ma 0.25 v base-emitter saturation voltage v be (sat) i c =100ma, i b = 10ma 1 v transition frequency f t v ce =10v, i c = 1ma, f=30mhz 80 mhz classification of h fe rank l h range 130-200 200-400 sot-23 1. base 2. emitter 3. collector collector cut-off current i cb o v cb =6 0v, i e =0 0.1 ua tiger electronic co.,ltd free datasheet http:///
typical characteristics tsc1815lt1 v ce ( sat ) /v be ( sat ) -i c f t -ic free datasheet http:///
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